Fabrication and Characterisation of InGaAs Gunn Diode-Based Light Emitting Device

Abstract

In this study, we have investigated emission characteristic of InGaAs- based light emitter that depends on Gunn effect observed from domain transition along the device. The devices were grown were grown by the Metal Organic Vapour Phase Epitaxy (MOVPE) and defined in a simple bar structures with different channel widths using standard pholithograpy techniques. In the high-speed Current – Voltage measurements, the threshold electric field was determined from the beginning of the Negative Differential Resistance (NDR). Electrical measurements were conducted at a pulse width of applied voltage of 20ns, 40ns and 60ns. At the onset of NDR, Gunn oscillations have observed with a period of approximately 1,6 ns. At around the electric field value of NDR, InGaAs light emitters have started emitting. Above threshold electric value a dractic increase at the emission has been observed. Based on the Gunn effect, InGaAs light emitting devices are observed to be emitted at a wavelength of about 1600 nm.