Gunn Effect in InGaAs Epilayer Structures

Abstract

In this study, we have investigated emission characteristic and Gunn oscillations of InGaAs- based light emitter that dependson Gunn effect observed from domain transition along the device. The structures were grown by the Metal Organic VapourPhase Epitaxy (MOVPE) with an alloy composition on %In = 0.53 and defined in a simple bar structure with different contactgeometries using standard pholithograpy techniques. Threshold electric field was determined from the beginning of the NDRto observe Gunn oscillations. In the electroluminescence measurements at this threshold electric field value (3kV/cm) [1] , itis observed that this structure emits at a wavelength of about 1600 nm. Above threshold electric value a drastic increase at theemission has been observed. Electrical measurements were conducted at a pulse width of applied voltage of 20ns, 40ns and60ns. From the beginning of the NDR, Gunn oscillations have observed with a frequency of approximately between 0,5 GHzand 1GHz depending on the electric field.