Show simple item record

Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications

dc.contributor.authorBalkan , Naci
dc.contributor.authorARIKAN, Mehmet Çetin
dc.contributor.authorEROL, Ayşe
dc.contributor.authorSun, Y.
dc.date.accessioned2021-03-05T09:53:57Z
dc.date.available2021-03-05T09:53:57Z
dc.identifier.citationSun Y., Balkan N., EROL A., ARIKAN M. Ç. , "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications", OPTICAL AND QUANTUM ELECTRONICS, cilt.40, ss.403-405, 2009
dc.identifier.issn0306-8919
dc.identifier.othervv_1032021
dc.identifier.otherav_a0314263-41e4-49ce-9d4a-794c9dcdac5b
dc.identifier.urihttp://hdl.handle.net/20.500.12627/107464
dc.language.isoeng
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.titleOptical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications
dc.typeMakale
dc.relation.journalOPTICAL AND QUANTUM ELECTRONICS
dc.contributor.department, ,
dc.identifier.volume40
dc.identifier.startpage403
dc.identifier.endpage405
dc.contributor.firstauthorID278410


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record