dc.contributor.author | kuntman, hakan | |
dc.contributor.author | ardalı, arda | |
dc.contributor.author | Kacar, FIRAT | |
dc.contributor.author | Kuntman, AYTEN | |
dc.date.accessioned | 2021-03-05T10:17:22Z | |
dc.date.available | 2021-03-05T10:17:22Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Kuntman A., ardalı a., kuntman h., Kacar F., "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors", SOLID-STATE ELECTRONICS, cilt.48, ss.217-223, 2004 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | av_a2574dd9-8c74-478d-91d4-9beb14459c06 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/108737 | |
dc.identifier.uri | https://doi.org/10.1016/j.sse.2003.07.001 | |
dc.description.abstract | The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance. | |
dc.language.iso | eng | |
dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
dc.subject | Mühendislik | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | Fizik | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | FİZİK, YOĞUN MADDE | |
dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
dc.subject | Sinyal İşleme | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Temel Bilimler | |
dc.title | A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors | |
dc.type | Makale | |
dc.relation.journal | SOLID-STATE ELECTRONICS | |
dc.contributor.department | , , | |
dc.identifier.volume | 48 | |
dc.identifier.issue | 2 | |
dc.identifier.startpage | 217 | |
dc.identifier.endpage | 223 | |
dc.contributor.firstauthorID | 17267 | |