dc.contributor.author | LAI, C. S. | |
dc.contributor.author | Cil, KADİR | |
dc.contributor.author | ZHU, Y. | |
dc.contributor.author | LAM, C. H. | |
dc.contributor.author | Silva, H. | |
dc.contributor.author | Gokirmak, A. | |
dc.contributor.author | Peng, H. K. | |
dc.contributor.author | Bakan, G. | |
dc.date.accessioned | 2021-03-05T11:36:27Z | |
dc.date.available | 2021-03-05T11:36:27Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Peng H. K. , Cil K., Gokirmak A., Bakan G., ZHU Y., LAI C. S. , LAM C. H. , Silva H., "Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride", THIN SOLID FILMS, cilt.520, ss.2976-2978, 2012 | |
dc.identifier.issn | 0040-6090 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_a8f234a9-2b5a-4636-a8bf-6e064b0107a9 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/112894 | |
dc.identifier.uri | https://doi.org/10.1016/j.tsf.2011.11.033 | |
dc.description.abstract | The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87 nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at similar to 150 degrees C for all films thicknesses, whereas the cubic-hexagonal phase transition temperature increases with film thickness, from similar to 200 degrees C for the 20 nm film to similar to 250 degrees C for the 87 nm film. The cubic-hexagonal transition occurs gradually for the 11 nm film. Implications for phase-change memory devices are discussed. (C) 2011 Elsevier B.V. All rights reserved. | |
dc.language.iso | eng | |
dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Fizik | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | FİZİK, YOĞUN MADDE | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | MALZEME BİLİMİ, KAPLAMALAR VE FİLMLER | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Malzeme Bilimi | |
dc.subject | MALZEME BİLİMİ, MULTIDISCIPLINARY | |
dc.title | Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride | |
dc.type | Makale | |
dc.relation.journal | THIN SOLID FILMS | |
dc.contributor.department | University Of Connecticut , , | |
dc.identifier.volume | 520 | |
dc.identifier.issue | 7 | |
dc.identifier.startpage | 2976 | |
dc.identifier.endpage | 2978 | |
dc.contributor.firstauthorID | 102906 | |