| dc.contributor.author | Poetschke, K. | |
| dc.contributor.author | Akcay, N. | |
| dc.contributor.author | Oncan, N. | |
| dc.contributor.author | Marent, A. | |
| dc.contributor.author | Geller, M. | |
| dc.contributor.author | Schliwa, A. | |
| dc.contributor.author | Feise, D. | |
| dc.contributor.author | Bimberg, D. | |
| dc.date.accessioned | 2021-03-05T12:47:43Z | |
| dc.date.available | 2021-03-05T12:47:43Z | |
| dc.date.issued | 2007 | |
| dc.identifier.citation | Marent A., Geller M., Schliwa A., Feise D., Poetschke K., Bimberg D., Akcay N., Oncan N., "10(6) years extrapolated hole storage time in GaSb/AlAs quantum dots", APPLIED PHYSICS LETTERS, cilt.91, 2007 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_aef3faff-63ce-4fb3-9c0d-794816ceb074 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/116702 | |
| dc.identifier.uri | https://doi.org/10.1063/1.2824884 | |
| dc.description.abstract | A thermal activation energy of 710 meV for hole emission from InAs/GaAs quantum dots (QDs) across an Al(0.9)Ga(0.1)As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory (DRAM) refresh time. The dependence of the hole storage time in different III-V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k center dot p theory. A storage time of about 106 years in GaSb/AlAs QDs is extrapolated, sufficient for a QD-based nonvolatile (flash) memory. (c) 2007 American Institute of Physics. | |
| dc.language.iso | eng | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | Temel Bilimler | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | Fizik | |
| dc.title | 10(6) years extrapolated hole storage time in GaSb/AlAs quantum dots | |
| dc.type | Makale | |
| dc.relation.journal | APPLIED PHYSICS LETTERS | |
| dc.contributor.department | Technical University of Berlin , , | |
| dc.identifier.volume | 91 | |
| dc.identifier.issue | 24 | |
| dc.contributor.firstauthorID | 82925 | |
