Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures

dc.contributor.author	EROL, Ayşe
dc.contributor.author	Guina, Mircea
dc.contributor.author	ARIKAN, Mehmet Çetin
dc.contributor.author	DÖNMEZ, Ömer
dc.contributor.author	SARCAN, Fahrettin
dc.contributor.author	Güneş, Mustafa
dc.contributor.author	Puustinen, Janne
dc.date.accessioned	2021-03-05T18:09:42Z
dc.date.available	2021-03-05T18:09:42Z
dc.identifier.citation	DÖNMEZ Ö., SARCAN F., EROL A., Güneş M., ARIKAN M. Ç. , Puustinen J., Guina M., "Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures", Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Türkiye, 24 - 26 Eylül 2013, ss.40
dc.identifier.other	vv_1032021
dc.identifier.other	av_c904d5d4-8c30-4d4c-a0f1-bbeb81e6b3fd
dc.identifier.uri	http://hdl.handle.net/20.500.12627/133211
dc.language.iso	eng
dc.subject	Temel Bilimler (SCI)
dc.subject	Fizik
dc.subject	Temel Bilimler
dc.title	Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures
dc.type	Bildiri
dc.contributor.department	Diğer Kurumlar , ,
dc.contributor.firstauthorID	452100

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