INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS

Date
1994
Author
CANTILE, M
YILDIRIM, Saffettin
MARGARITONDO, G
SORBA, L
FRANCIOSI, A
DELLORTO, T
ALMEIDA, J
COLUZZA, C
BALDERESCHI, A
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Abstract
Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.
URI
http://hdl.handle.net/20.500.12627/135526
https://doi.org/10.1063/1.111699
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