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dc.contributor.authorLAM, CHUNG
dc.contributor.authorGOKIRMAK, ALI
dc.contributor.authorDIRISAGLIK, FARUK
dc.contributor.authorAKBULUT, MUSTAFA B.
dc.contributor.authorZHU, YU
dc.contributor.authorÇİL, Kadir
dc.contributor.authorBAKAN, GOKHAN
dc.contributor.authorSILVA, HELENA
dc.contributor.authorJURADO, ZOILA
dc.contributor.authorWoods, Zachary
dc.date.accessioned2021-03-02T22:17:59Z
dc.date.available2021-03-02T22:17:59Z
dc.identifier.citationÇİL K., BAKAN G., JURADO Z., Woods Z., DIRISAGLIK F., AKBULUT M. B. , ZHU Y., LAM C., GOKIRMAK A., SILVA H., "Effect of Baseline Voltage on the Set Dynamics of Phase Change Memory Devices", Materials Research Society (MRS) 2014 Spring Meeting, San Francisco, Amerika Birleşik Devletleri, 21 - 25 Nisan 2014, cilt.HH, sa.302, ss.302
dc.identifier.otherav_0be53940-9ec4-490a-941f-bf24864148f9
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/13660
dc.identifier.urihttp://www.mrs.org/spring-2014-program-hh/
dc.language.isoeng
dc.subjectMühendislik
dc.subjectMühendislik ve Teknoloji
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.titleEffect of Baseline Voltage on the Set Dynamics of Phase Change Memory Devices
dc.typeBildiri
dc.contributor.departmentUluslararası Antalya Üniversitesi , ,
dc.identifier.volumeHH
dc.contributor.firstauthorID390021


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