Gain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology

Author
Takagi, Shigetaga
Yarman, B. Siddik
Fujii, Nobuo
Retdian, Nicodimus
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Abstract
In this paper., gain bandwidth limitations of' a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency hand of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely he utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems; placed silicon chips up to X-Band.
URI
http://hdl.handle.net/20.500.12627/139115
https://doi.org/10.1109/ecctd.2007.4529587
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