An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped  GaInNAs/GaAs quantum Wells

dc.contributor.author	ARIKAN, Mehmet Çetin
dc.contributor.author	SARCAN, Fahrettin
dc.contributor.author	Guina, Mircea
dc.contributor.author	EROL, Ayşe
dc.contributor.author	DÖNMEZ, Ömer
dc.contributor.author	Güneş, Mustafa
dc.contributor.author	Puustinen, Janne
dc.date.accessioned	2021-03-05T21:27:07Z
dc.date.available	2021-03-05T21:27:07Z
dc.identifier.citation	SARCAN F., DÖNMEZ Ö., Güneş M., EROL A., ARIKAN M. Ç. , Puustinen J., Guina M., "An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped GaInNAs/GaAs quantum Wells", International Conference On Superlattices, Nanostructures and Nanodevices, Dresden, Almanya, 22 - 27 Temmuz 2012, ss.359
dc.identifier.other	vv_1032021
dc.identifier.other	av_d8f0505a-df7d-49ec-aeb6-94c3def78272
dc.identifier.uri	http://hdl.handle.net/20.500.12627/143112
dc.language.iso	eng
dc.subject	Temel Bilimler (SCI)
dc.subject	Fizik
dc.subject	Temel Bilimler
dc.title	An Analysis of Hall Mobility In As Grown And Annealed n- and p-type Modulation Doped GaInNAs/GaAs quantum Wells
dc.type	Bildiri
dc.contributor.department	Diğer Kurumlar , ,
dc.contributor.firstauthorID	452132

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