Optical and Electrical Properties of n- and p-type Modulation Doped GaAs1-xBix/Al0.15Ga0.85As Single Quantum Well Heterostructure

dc.contributor.author	ÇETİNKAYA, ÇAĞLAR
dc.contributor.author	NUTKU, Ferhat
dc.contributor.author	DÖNMEZ, Ömer
dc.contributor.author	ÇOKDUYGULULAR, ERMAN
dc.contributor.author	EROL, Ayşe
dc.contributor.author	Puustinen, Janne
dc.contributor.author	Guina, Mircea
dc.date.accessioned	2021-03-05T21:33:21Z
dc.date.available	2021-03-05T21:33:21Z
dc.identifier.citation	ÇETİNKAYA Ç., ÇOKDUYGULULAR E., NUTKU F., DÖNMEZ Ö., Puustinen J., EROL A., Guina M., "Optical and Electrical Properties of n- and p-type Modulation Doped GaAs1-xBix/Al0.15Ga0.85As Single Quantum Well Heterostructure", International Conference on Condensed Matter and Material Sciences, Adana, Türkiye, 11 - 15 Ekim 2017, ss.125
dc.identifier.other	vv_1032021
dc.identifier.other	av_d978f102-6816-4e54-a270-3f181d90dd26
dc.identifier.uri	http://hdl.handle.net/20.500.12627/143429
dc.language.iso	eng
dc.subject	Temel Bilimler (SCI)
dc.subject	Fizik
dc.subject	Temel Bilimler
dc.title	Optical and Electrical Properties of n- and p-type Modulation Doped GaAs1-xBix/Al0.15Ga0.85As Single Quantum Well Heterostructure
dc.type	Bildiri
dc.contributor.department	, ,
dc.contributor.firstauthorID	353123

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