dc.contributor.author | Özçelik, Süleyman | |
dc.contributor.author | Kınacı, Barış | |
dc.contributor.author | Çokduygulular, Erman | |
dc.contributor.author | Çetinkaya, Çağlar | |
dc.contributor.author | Efkere, Halil İbrahim | |
dc.contributor.author | Özen, Yunus | |
dc.contributor.author | Akın Sönmez, Nihan | |
dc.date.accessioned | 2021-02-28T14:34:19Z | |
dc.date.available | 2021-02-28T14:34:19Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Kınacı B., Çokduygulular E., Çetinkaya Ç., Efkere H. İ. , Özen Y., Akın Sönmez N., Özçelik S., "Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering", Semiconductors, cilt.55, ss.28-36, 2021 | |
dc.identifier.issn | 1063-7826 | |
dc.identifier.other | av_cfd33b5a-65e6-4597-ae88-8347a374989c | |
dc.identifier.other | vv_1032021 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/1494 | |
dc.identifier.uri | https://link.springer.com/article/10.1134/S1063782621010115 | |
dc.identifier.uri | https://doi.org/10.1134/s1063782621010115 | |
dc.description.abstract | In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600°C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600°C has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited onn-Si substrate, were characterized byI(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward-biasI(V) curves at room temperature. The series resistanceRsvalues of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600°C has lowRsvalues compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600°C is suitable for innovative and state-of-the-art electronic and optoelectronic device applications. | |
dc.language.iso | eng | |
dc.subject | ÇOK DİSİPLİNLİ BİLİMLER | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | Multidisciplinary | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Doğa Bilimleri Genel | |
dc.title | Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering | |
dc.type | Makale | |
dc.relation.journal | Semiconductors | |
dc.contributor.department | İstanbul Üniversitesi-Cerrahpaşa , Mühendislik Fakültesi , Mühendislik Bilimleri Bölümü | |
dc.identifier.volume | 55 | |
dc.identifier.issue | 1 | |
dc.identifier.startpage | 28 | |
dc.identifier.endpage | 36 | |
dc.contributor.firstauthorID | 2513341 | |