| dc.contributor.author | Arikan, M. C. | |
| dc.contributor.author | Donmez, Ömer | |
| dc.contributor.author | Saarinen, M. | |
| dc.contributor.author | Erol, A. | |
| dc.contributor.author | Basak, H. | |
| dc.date.accessioned | 2021-03-02T22:39:34Z | |
| dc.date.available | 2021-03-02T22:39:34Z | |
| dc.identifier.citation | Basak H., Erol A., Donmez Ö., Arikan M. C. , Saarinen M., "The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures", 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, Fransa, 4 - 07 Temmuz 2010, cilt.8 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_0df2fedc-9068-4b6f-9180-a36cfa396d02 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/14963 | |
| dc.identifier.uri | https://doi.org/10.1002/pssc.201000795 | |
| dc.description.abstract | As-grown and annealed Ga0.6In0.4N0.005As0.995/GaAs with 1, 3, and 7 quantum well structures grown by Molecular Beam Epitaxy (MBE) are investigated using Photoluminescence (PL) and Photo-Induced Current Transient Spectroscopy (PICTS) measurements in order to determine the effects of the number of quantum wells and thermal annealing on optical properties and qualities of the structures. PICTS results reveal that all the samples with different quantum well numbers have two dominate trap levels which related to GaInNAs layer. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | |
| dc.language.iso | eng | |
| dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
| dc.subject | Temel Bilimler | |
| dc.subject | FİZİK, YOĞUN MADDE | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | Fizik | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.title | The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures | |
| dc.type | Bildiri | |
| dc.contributor.department | İstanbul Üniversitesi , , | |
| dc.identifier.volume | 8 | |
| dc.contributor.firstauthorID | 1483799 | |
