Basit öğe kaydını göster

dc.contributor.authorGeorgakilas, A.
dc.contributor.authorErol, Ayşe
dc.contributor.authorIliopoulos, E.
dc.contributor.authorArikan, M. C.
dc.contributor.authorDonmez, Ömer
dc.contributor.authorYILMAZ, MESUT
dc.contributor.authorULUĞ, BÜLENT
dc.contributor.authorUlug, A.
dc.contributor.authorAjagunna, A. O.
dc.date.accessioned2021-03-06T09:53:01Z
dc.date.available2021-03-06T09:53:01Z
dc.date.issued2011
dc.identifier.citationDonmez Ö., YILMAZ M., Erol A., ULUĞ B., Arikan M. C. , Ulug A., Ajagunna A. O. , Iliopoulos E., Georgakilas A., "Influence of high electron concentration on band gap and effective electron mass of InN", PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, cilt.248, ss.1172-1175, 2011
dc.identifier.issn0370-1972
dc.identifier.otherav_e794c601-2104-4118-8c1a-ee8a4edce715
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/152274
dc.identifier.urihttps://doi.org/10.1002/pssb.201000780
dc.description.abstractEffects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800 nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k.p model. Extracted PL results indicate that the samples have approximately 0.685 eV band gap energy at 77 K. Effective mass of the carriers, which is calculated as 0.097m(0) for electron concentration of similar to 10(19) cm(-3), are also observed to be influenced by the high carrier concentration. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.language.isoeng
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectFizik
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.titleInfluence of high electron concentration on band gap and effective electron mass of InN
dc.typeMakale
dc.relation.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
dc.contributor.departmentAkdeniz Üniversitesi , Su Ürünleri Fakültesi , Su Ürünleri Yetiş.Bölümü
dc.identifier.volume248
dc.identifier.issue5
dc.identifier.startpage1172
dc.identifier.endpage1175
dc.contributor.firstauthorID68857


Bu öğenin dosyaları:

DosyalarBoyutBiçimGöster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster