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Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures,

dc.contributor.authorDÖNMEZ, Ömer
dc.date.accessioned2021-03-06T20:12:09Z
dc.date.available2021-03-06T20:12:09Z
dc.identifier.citationDÖNMEZ Ö., "Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures,", TPS 31. International Physics Congress, Muğla, Türkiye, 21 Temmuz - 24 Ağustos 2014, ss.242
dc.identifier.othervv_1032021
dc.identifier.otherav_f93974d7-6276-48be-b7c0-5858c5497a1d
dc.identifier.urihttp://hdl.handle.net/20.500.12627/163237
dc.language.isoeng
dc.subjectTemel Bilimler
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.titleAnalytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures,
dc.typeBildiri
dc.contributor.departmentİstanbul Üniversitesi , Fen Fakültesi , Fizik
dc.contributor.firstauthorID646646


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