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dc.contributor.authorBaker, B. B.
dc.contributor.authorCelebi, Y. G.
dc.contributor.authorCarroll, B. R.
dc.contributor.authorBani-Salameh, H. N.
dc.contributor.authorYonenaga, I.
dc.contributor.authorMengyan, P. W.
dc.contributor.authorLichti, R. L.
dc.date.accessioned2021-03-06T20:25:11Z
dc.date.available2021-03-06T20:25:11Z
dc.date.issued2012
dc.identifier.citationMengyan P. W. , Lichti R. L. , Celebi Y. G. , Carroll B. R. , Baker B. B. , Bani-Salameh H. N. , Yonenaga I., "Muonium transitions in Ge-rich SiGe alloys", PHYSICA B-CONDENSED MATTER, cilt.407, ss.2829-2832, 2012
dc.identifier.issn0921-4526
dc.identifier.otherav_fa19bcef-ca38-4494-92d1-e347ff744c3a
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/163758
dc.identifier.urihttps://doi.org/10.1016/j.physb.2011.08.027
dc.description.abstractWe discuss charge-state and site-change transitions of muonium (Mu) in bulk Czochralski-grown Si1-xGex alloys studied via longitudinal field muon spin relaxation (LF-mu SR). A useful application of the muon spin research technique utilizes the similarities of neutral muonium (Mu(0)=mu(+)e(-)) to the hydrogen atom to provide an experimentally accessible analog to hydrogen. This contribution focuses primarily on three Ge-rich samples (x=0.94, 0.91 and 0.81) as well as a general discussion of the compositional trends of Mu chemical states and associated transition dynamics. These LF-mu SR results, in conjunction with prior muon spin research studies, allow an extensive description of Mu defect chemistry in Si1-xGex as part of a larger project that has focused on the compositional trends in Mu hyperfine frequencies as well as the acceptor and donor energies. Published by Elsevier B.V.
dc.language.isoeng
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectFizik
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.titleMuonium transitions in Ge-rich SiGe alloys
dc.typeMakale
dc.relation.journalPHYSICA B-CONDENSED MATTER
dc.contributor.departmentTexas Tech University System , ,
dc.identifier.volume407
dc.identifier.issue15
dc.identifier.startpage2829
dc.identifier.endpage2832
dc.contributor.firstauthorID45968


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