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dc.contributor.authorUlutas, K.
dc.contributor.authorDeger, Deniz
dc.contributor.authorKalkan, Nevin
dc.contributor.authorYildirim, SAFFETTİN
dc.date.accessioned2021-03-06T21:15:57Z
dc.date.available2021-03-06T21:15:57Z
dc.identifier.citationDeger D., Ulutas K., Yildirim S., Kalkan N., "Relaxation spectrum of the TlSbSe2 thin films", PHYSICA B-CONDENSED MATTER, cilt.404, ss.5231-5233, 2009
dc.identifier.issn0921-4526
dc.identifier.othervv_1032021
dc.identifier.otherav_fdf44b2d-5c93-478e-9e76-c1f47eee95d2
dc.identifier.urihttp://hdl.handle.net/20.500.12627/166107
dc.identifier.urihttps://doi.org/10.1016/j.physb.2009.08.311
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=74349098752&origin=inward
dc.description.abstractThe dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporation of TlSbSe2 crystals grown by Stockber-Bridgman technique, have been measured using ohmic Al electrodes in the frequency range 0.2-100 KHz and within the temperature interval 293-353 K. The capacitance are found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated too. A good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements has been observed. (C) 2009 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.subjectFizik
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.titleRelaxation spectrum of the TlSbSe2 thin films
dc.typeMakale
dc.relation.journalPHYSICA B-CONDENSED MATTER
dc.contributor.departmentİstanbul Teknik Üniversitesi , ,
dc.identifier.volume404
dc.identifier.startpage5231
dc.identifier.endpage5233
dc.contributor.firstauthorID45460


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