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dc.contributor.authorChoı, Fatma Pınar
dc.contributor.authorErol, Ayşe
dc.contributor.authorKuruoglu, Furkan
dc.contributor.authorGüneş, Serap
dc.contributor.authorAlishah, Hamed Moeini
dc.date.accessioned2021-12-10T12:45:23Z
dc.date.available2021-12-10T12:45:23Z
dc.identifier.citationAlishah H. M. , Choı F. P. , Kuruoglu F., Erol A., Güneş S., "Improvement of fill factor by the utilization of Zn-doped PEDOT:PSS hole-transport layers for p-i-n planar type of perovskite solar cells", ELECTROCHIMICA ACTA, cilt.388, 2021
dc.identifier.issn0013-4686
dc.identifier.othervv_1032021
dc.identifier.otherav_d4c4e360-9a3f-4333-a4b0-f194b4cf433c
dc.identifier.urihttp://hdl.handle.net/20.500.12627/174586
dc.identifier.urihttps://doi.org/10.1016/j.electacta.2021.138658
dc.description.abstractPoly (3,4-ethylenedioxythiophene)-poly (styrene sulfonate (PEDOT:PSS) is a widely-known conductive polymer mixture that is mostly engaged as a hole transport layer (HTL) in organic and perovskite so-lar cells (PSCs). In this study, it has been demonstrated that the use of Zn as an additive in PEDOT:PSS solution improved the photovoltaic performance of the ambient air solution-based fabrication of methy-lammonium lead tri-iodide (MAPbI(3)) based devices. The short circuit current density (JSC) of the device increased from 15.4 to 17.2 mA/cm(2), while the fill factor (FF) improved from 0.70 to 0.83 by using Zn-doped PEDOT:PSS as a hole transport layer (HTL), which is a record value for only gamma-butyrolactone (GBL) based MAPbI(3) PSCs. Additionally, open-circuit (VOC) value is boosted up from 890 to 925 mV by Zn-doping, which might be linked to the increased work function of the investigated HTLs. Moreover, the synergetic effect of improved electrical conductivity and hole mobility of PEDOT:PSS film and decreased the trap density of perovskite led to an increase of 37% in power conversion efficiency (PCE) and the stability of the inverted planar PSCs. (C) 2021 Elsevier Ltd. All rights reserved.
dc.language.isoeng
dc.subjectChemistry (miscellaneous)
dc.subjectGeneral Chemistry
dc.subjectPhysical Sciences
dc.subjectTemel Bilimler
dc.subjectElectrochemistry
dc.subjectElektrokimya
dc.subjectFizikokimya
dc.subjectTemel Bilimler (SCI)
dc.subjectKimya
dc.subjectELEKTROKİMYA
dc.titleImprovement of fill factor by the utilization of Zn-doped PEDOT:PSS hole-transport layers for p-i-n planar type of perovskite solar cells
dc.typeMakale
dc.relation.journalELECTROCHIMICA ACTA
dc.contributor.departmentYıldız Teknik Üniversitesi , ,
dc.identifier.volume388
dc.contributor.firstauthorID2696992


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