| dc.contributor.author | Ürgen, Mustafa Kamil | |
| dc.contributor.author | Demiroglu, D. | |
| dc.contributor.author | Tatar, Beyhan | |
| dc.contributor.author | Kazmanli, K. | |
| dc.date.accessioned | 2022-02-18T08:58:19Z | |
| dc.date.available | 2022-02-18T08:58:19Z | |
| dc.identifier.citation | Demiroglu D., Tatar B., Kazmanli K., Ürgen M. K. , "Investigation of Structural and Electrical Properties of Flat a-Si/c-Si Heterostructure Fabricated by EBPVD Technique", 3rd International Congress on Advances in Applied Physics and Materials Science, Antalya, Türkiye, 24 - 28 Nisan 2013, cilt.1569, ss.158-161 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_0d7c8580-3b3d-4fd4-ad47-339c47aa9522 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/176243 | |
| dc.identifier.uri | https://doi.org/10.1063/1.4849249 | |
| dc.description.abstract | Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructitre were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Phi(B), diode ideality factor eta were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity. | |
| dc.language.iso | eng | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | Malzeme Bilimi | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | Temel Bilimler | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | Fizik | |
| dc.subject | Physical Sciences | |
| dc.subject | General Materials Science | |
| dc.subject | Statistical and Nonlinear Physics | |
| dc.subject | Materials Chemistry | |
| dc.subject | Metals and Alloys | |
| dc.subject | MALZEME BİLİMİ, MULTIDISCIPLINARY | |
| dc.title | Investigation of Structural and Electrical Properties of Flat a-Si/c-Si Heterostructure Fabricated by EBPVD Technique | |
| dc.type | Bildiri | |
| dc.contributor.department | İstanbul Teknik Üniversitesi , , | |
| dc.identifier.volume | 1569 | |
| dc.contributor.firstauthorID | 3051027 | |
