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dc.contributor.authorSarcan, Fahrettin
dc.contributor.authorWang, Yue
dc.date.accessioned2023-02-21T08:27:59Z
dc.date.available2023-02-21T08:27:59Z
dc.identifier.citationSarcan F., Wang Y., "Few-layer MoTe 2 -based Photodetector", 6th INTERNATIONAL APPLIED SCIENCE CONGRESS, Van, Türkiye, 21 - 23 Mayıs 2021, ss.1
dc.identifier.othervv_1032021
dc.identifier.otherav_1b35ee31-a7ac-4b87-bbd3-6721d50b6ab5
dc.identifier.urihttp://hdl.handle.net/20.500.12627/186688
dc.description.abstract2D MoTe2is highly attractive material due to its band gap of 1 eV which is compatible with near infrared optoelectronic applications such as LED, laser, photodetector. We present the fabrication details and performance of a metal- MoTe2-metal photodetector. We observed two main absorptions at 1 eV and 1.75 eV which are bandgap and high energy transition of few layer MoTe2. The dark current of photodetector is about 1 pA at applied bias of 3 V and the photocurrent of the devices is about 1𝜇𝐴under 6 mW excitation power. We concluded that few layer- MoTe2based MSM photodetector can be an alternative for its III-V group material-based counterparts.
dc.language.isoeng
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectYoğun Madde 2:Elektronik Yapı, Elektrik, Manyetik ve Optik Özellikler
dc.subjectTemel Bilimler
dc.subjectYoğun Madde Fiziği
dc.subjectElektronik, Optik ve Manyetik Malzemeler
dc.subjectMultidisipliner
dc.subjectFizik Bilimleri
dc.subjectÇOK DİSİPLİNLİ BİLİMLER
dc.subjectFizik
dc.subjectDoğa Bilimleri Genel
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, YOĞUN MADDE
dc.titleFew-layer MoTe 2 -based Photodetector
dc.typeBildiri
dc.contributor.departmentİstanbul Üniversitesi , Fen Fakültesi , Fizik Bölümü
dc.contributor.firstauthorID3448755


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