Few-layer MoTe 2 -based Photodetector

Abstract

2D MoTe2is highly attractive material due to its band gap of 1 eV which is compatible with near infrared optoelectronic applications such as LED, laser, photodetector. We present the fabrication details and performance of a metal- MoTe2-metal photodetector. We observed two main absorptions at 1 eV and 1.75 eV which are bandgap and high energy transition of few layer MoTe2. The dark current of photodetector is about 1 pA at applied bias of 3 V and the photocurrent of the devices is about 1𝜇𝐴under 6 mW excitation power. We concluded that few layer- MoTe2based MSM photodetector can be an alternative for its III-V group material-based counterparts.