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dc.contributor.authorUlutas, K.
dc.contributor.authorIsmailova, P.
dc.contributor.authorHasanov, A.A.
dc.contributor.authorYAKUT, SEMİH
dc.contributor.authorDEGER, Davut
dc.contributor.authorCicek, Z.
dc.contributor.authorBozoglu, Deniz
dc.contributor.authorMustafaeva, S.
dc.date.accessioned2023-10-10T12:59:41Z
dc.date.available2023-10-10T12:59:41Z
dc.identifier.citationCicek Z., YAKUT S., DEGER D., Bozoglu D., Mustafaeva S., Ismailova P., Hasanov A., Ulutas K., "Thickness dependence of dielectric properties of TlGaS2 thin films", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023
dc.identifier.issn1369-8001
dc.identifier.othervv_1032021
dc.identifier.otherav_29c4cfdb-3b82-416b-a409-057f47d85bcd
dc.identifier.urihttp://hdl.handle.net/20.500.12627/190366
dc.identifier.urihttps://avesis.istanbul.edu.tr/api/publication/29c4cfdb-3b82-416b-a409-057f47d85bcd/file
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2023.107733
dc.description.abstractBulk TlGaS2 single crystals were produced by the Bridgman method. TlGaS2 thin film samples were deposited from bulk crystals by the thermal evaporation technique under a high vacuum. TlGaS2 thin films were deposited in the 100-750 nm thickness range. Dielectric spectroscopy measurements were operated in the frequency range of 1-105 Hz and temperature range of 273-373 K under the voltage of 1 V (rms). TlGaS2 thin films have amorphous. Bulk TlGaS2 has a crystalline structure based on X-Ray diffraction patterns. Three polarization mechanisms were detected from the analysis of Cole-Cole plots. At low frequencies, the effect of interfacial polarization was observed. Toward higher frequencies, two dipolar polarization mechanisms were detected. In comparison to the bulk TlGaS2 single crystal, the dielectric constant of the thin films has 100-1000 times larger values at frequencies lower than 100 Hz. The thickness limit at which bulk physical properties started has been investigated. The transition thickness between bulk/thin film properties was detected at around 700 nm. The low dielectric constant and the good conductivity around 10-8 S/cm at105 Hz can give opportunities to use these thin films in technological applications.
dc.language.isoeng
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectİstatistiksel ve Doğrusal Olmayan Fizik
dc.subjectYoğun Madde Fiziği
dc.subjectMetaller ve Alaşımlar
dc.subjectMalzeme Kimyası
dc.subjectElektronik, Optik ve Manyetik Malzemeler
dc.subjectGenel Malzeme Bilimi
dc.subjectGenel Mühendislik
dc.subjectElektrik ve Elektronik Mühendisliği
dc.subjectMühendislik (çeşitli)
dc.subjectFizik Bilimleri
dc.subjectMALZEME BİLİMİ, ÇOKDİSİPLİNLİ
dc.subjectFİZİK, UYGULAMALI
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectMalzeme Bilimi
dc.titleThickness dependence of dielectric properties of TlGaS2 thin films
dc.typeMakale
dc.relation.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.contributor.departmentİstanbul Üniversitesi , ,
dc.contributor.firstauthorID4457913


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