dc.contributor.author | Kuntman, A | |
dc.contributor.author | Yenidunya, R | |
dc.contributor.author | Kasgoz, A | |
dc.contributor.author | Kuntman, H | |
dc.date.accessioned | 2021-03-03T10:15:45Z | |
dc.date.available | 2021-03-03T10:15:45Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Kuntman A., Yenidunya R., Kasgoz A., Kuntman H., "A new study on spin-on-silica for multilevel interconnect applications", MICROELECTRONICS JOURNAL, cilt.30, sa.2, ss.127-131, 1999 | |
dc.identifier.issn | 0026-2692 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_219c0ec8-fc56-4413-9dfe-4f47b60e086e | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/27636 | |
dc.identifier.uri | https://doi.org/10.1016/s0026-2692(98)00099-8 | |
dc.description.abstract | In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal-silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a Variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks. (C) 1999 Elsevier Science Ltd. All rights reserved. | |
dc.language.iso | eng | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
dc.subject | Yüzeyler ve arayüzeyler; İnce filmler ve nanosistemler | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
dc.subject | Sinyal İşleme | |
dc.subject | Fizik | |
dc.subject | NANOBİLİM VE NANOTEKNOLOJİ | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Mühendislik | |
dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
dc.title | A new study on spin-on-silica for multilevel interconnect applications | |
dc.type | Makale | |
dc.relation.journal | MICROELECTRONICS JOURNAL | |
dc.contributor.department | , , | |
dc.identifier.volume | 30 | |
dc.identifier.issue | 2 | |
dc.identifier.startpage | 127 | |
dc.identifier.endpage | 131 | |
dc.contributor.firstauthorID | 122711 | |