| dc.contributor.author | ZHU, Y. | |
| dc.contributor.author | Cil, KADİR | |
| dc.contributor.author | Silva, H. | |
| dc.contributor.author | LAM, C. H. | |
| dc.contributor.author | LI, J. | |
| dc.date.accessioned | 2021-03-03T10:18:02Z | |
| dc.date.available | 2021-03-03T10:18:02Z | |
| dc.identifier.citation | Cil K., ZHU Y., LI J., LAM C. H. , Silva H., "Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride", THIN SOLID FILMS, cilt.536, ss.216-219, 2013 | |
| dc.identifier.issn | 0040-6090 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_21d66e97-6201-4648-8ddd-6bbd133cb623 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/27765 | |
| dc.identifier.uri | https://doi.org/10.1016/j.tsf.2013.03.087 | |
| dc.description.abstract | The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow(1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at similar to 170 degrees C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be similar to 80 degrees C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride. (C) 2013 Elsevier B.V. All rights reserved. | |
| dc.language.iso | eng | |
| dc.subject | FİZİK, YOĞUN MADDE | |
| dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
| dc.subject | Temel Bilimler | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | Fizik | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | MALZEME BİLİMİ, KAPLAMALAR VE FİLMLER | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | Malzeme Bilimi | |
| dc.subject | MALZEME BİLİMİ, MULTIDISCIPLINARY | |
| dc.title | Assisted cubic to hexagonal phase transition in GeSbTe thin films on silicon nitride | |
| dc.type | Makale | |
| dc.relation.journal | THIN SOLID FILMS | |
| dc.contributor.department | International Business Machines (IBM) , , | |
| dc.identifier.volume | 536 | |
| dc.identifier.startpage | 216 | |
| dc.identifier.endpage | 219 | |
| dc.contributor.firstauthorID | 102889 | |
