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dc.contributor.authorArdali, S.
dc.contributor.authorDönmez, Ömer
dc.contributor.authorYildirim, Saffettin
dc.contributor.authorAydın, M.
dc.contributor.authorErol, Ayşe
dc.contributor.authorGuina, M.
dc.contributor.authorHilska, J.
dc.contributor.authorPuustinen, J.
dc.contributor.authorTiras, E.
dc.date.accessioned2021-03-02T17:05:41Z
dc.date.available2021-03-02T17:05:41Z
dc.identifier.citationDönmez Ö., Aydın M., Ardali S., Yildirim S., Tiras E., Erol A., Puustinen J., Hilska J., Guina M., "Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.35, 2020
dc.identifier.issn0268-1242
dc.identifier.othervv_1032021
dc.identifier.otherav_598e351f-1065-4658-8c81-db673e6c4956
dc.identifier.urihttp://hdl.handle.net/20.500.12627/3513
dc.identifier.urihttps://doi.org/10.1088/1361-6641/ab94d9
dc.description.abstractWe report on the power loss mechanisms of hot electrons in as-grown and annealed n-type modulation-doped Al0.15Ga0.85As/GaAs1-xBix(x= 0 and 0.04) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. The two-dimensional (2D) electron gas is heated by applying various electric fields under a steady-state magnetic field, and the effect of the applied electric field on the Shubnikov de Haas (SdH) oscillations is analyzed to investigate the power loss mechanism. The temperature of hot electrons (T-e) has been obtained by comparing the lattice temperature and applied electric field dependencies of the SdH oscillation amplitude. The hot electron temperature is almost the same for both Bi-free and Bi-containing samples except for the sample annealed at a higher temperature (700 degrees C) than the growth temperature of GaAsBi. The electron temperature dependence of power loss is analyzed using current theoretical analytic models derived for 2D semiconductors. We find that energy relaxation occurs in the intermediate temperature regime, including mixing of piezoelectric and deformation potential scattering. The power loss of hot electrons is found to be proportional to (Te gamma-TL gamma<i) with gamma in the range from 2.4 to 4.2, which indicates that the hot electron relaxation is due to acoustic phonon scatterings via unscreened deformation potential and piezoelectric scattering. It is found that deformation potential scattering is dominant over piezoelectric scattering in the Bi-free sample, while the incorporation of Bi into the GaAs lattice makes these processes comparable. After thermal annealing at lower than growth temperature (350 degrees C), the scattering mechanism switches from deformation potential to piezoelectric scattering. After thermal annealing at higher than growth temperature (700 degrees C), the theoretical model does not fit to the experimental results due to degradation of the sample.
dc.language.isoeng
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectFizik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectMühendislik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectMühendislik ve Teknoloji
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectSinyal İşleme
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectTemel Bilimler (SCI)
dc.titlePower loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
dc.typeMakale
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.contributor.departmentİstanbul Üniversitesi , Fen Fakültesi , Fizik Bölümü
dc.identifier.volume35
dc.contributor.firstauthorID2357695


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