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Resonant Tunneling Structures for Reducing the Erase Time in a Quantum Dot-Based Memory

dc.contributor.authorÖNCAN, Nurten
dc.date.accessioned2021-03-03T13:47:14Z
dc.date.available2021-03-03T13:47:14Z
dc.identifier.citationÖNCAN N., "Resonant Tunneling Structures for Reducing the Erase Time in a Quantum Dot-Based Memory", DPG Conference 2014, Dresden, Almanya, 30 Mart - 04 Nisan 2014, cilt.2, sa.13, ss.242
dc.identifier.otherav_360de2b2-572e-445d-8976-4425eeda3010
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/40505
dc.identifier.urihttp://www.
dc.language.isoeng
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.titleResonant Tunneling Structures for Reducing the Erase Time in a Quantum Dot-Based Memory
dc.typeBildiri
dc.contributor.departmentİstanbul Üniversitesi , Fen Fakültesi , Fizik
dc.identifier.volume2
dc.contributor.firstauthorID278328


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