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dc.contributor.authorMEŞE, ALİ İHSAN
dc.contributor.authorSiddiki, Afif
dc.contributor.authorYÜCEL, MELİKE BEHİYE
dc.contributor.authorSalman, Aysevil
dc.date.accessioned2021-03-03T14:20:50Z
dc.date.available2021-03-03T14:20:50Z
dc.date.issued2013
dc.identifier.citationSalman A., MEŞE A. İ. , YÜCEL M. B. , Siddiki A., "Semi-analytical model of Hall resistance anomalies (overshooting) in the fractional quantized Hall effect", EUROPEAN PHYSICAL JOURNAL B, cilt.86, sa.5, 2013
dc.identifier.issn1434-6028
dc.identifier.otherav_38fccc68-039a-45ff-b3a7-9609b38d5cbb
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/42361
dc.identifier.urihttps://doi.org/10.1140/epjb/e2013-30758-3
dc.description.abstractWe predict resistance anomalies to be observed at high-mobility two-dimensional electron systems (2DESs) in the fractional quantized Hall regime, where the narrow (L < 10 mu m) Hall bar is defined by top gates. A semi-analytic calculation scheme is used to describe the formation of integral and fractional incompressible strips. We incorporate the screening properties of the 2DES, together with the effects of perpendicular magnetic field, to calculate the effective widths of the current carrying channels. The many-body effects are included to our calculation scheme via the energy gap obtained from the well-accepted formulation of the composite fermions. We show that the fractional incompressible strips at the edges, assuming different filling factors, become evanescent and can co-exist in certain magnetic field intervals yielding an overshoot at the Hall resistance, similar to that of the integral quantized Hall effect. We also provide a mechanism to explain the absence of 1/3 state in Fabry-Perot type interference experiments. A gate defined narrow sample design is proposed to enhance the visibility of fragile effects like interference and overshooting based on our semi-analytical model.
dc.language.isoeng
dc.subjectFizik
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, YOĞUN MADDE
dc.titleSemi-analytical model of Hall resistance anomalies (overshooting) in the fractional quantized Hall effect
dc.typeMakale
dc.relation.journalEUROPEAN PHYSICAL JOURNAL B
dc.contributor.departmentAkdeniz Üniversitesi , ,
dc.identifier.volume86
dc.identifier.issue5
dc.contributor.firstauthorID208947


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