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dc.contributor.authorYildirim, S
dc.contributor.authorUlutas, K
dc.contributor.authorDeger, Deniz
dc.contributor.authorKalkan, N
dc.contributor.authorCelebi, YG
dc.date.accessioned2021-03-03T16:16:21Z
dc.date.available2021-03-03T16:16:21Z
dc.date.issued2005
dc.identifier.citationKalkan N., Yildirim S., Deger D., Ulutas K., Celebi Y., "dc conduction properties of TlSbSe2 crystals", MATERIALS RESEARCH BULLETIN, cilt.40, sa.6, ss.936-941, 2005
dc.identifier.issn0025-5408
dc.identifier.otherav_435e5590-17f2-4520-a20b-805e7b5a2b74
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/49003
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2005.03.003
dc.description.abstractTlSbSe2 samples used for electrical measurements were cleaved from larger crystals grown by using the Bridgman-Stockbarger method. Electrical properties of TlSbSe2 have been carried out as a function of temperature (203-258 K) at different dc electric fields. The dc studies revealed the non-ohmic type of conduction (log I versus log V plot). The field lowering coefficient beta is evaluated from log I versus E-1/2 plot. It is found that the dominant conduction mechanism in these samples is Poole-Frenkel type. The activation energies are also calculated at different voltages. It is seen that the activation energy decreases with increase of applied voltage. (c) 2005 Elsevier Ltd. All rights reserved.
dc.language.isoeng
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMalzeme Bilimi
dc.subjectMühendislik ve Teknoloji
dc.titledc conduction properties of TlSbSe2 crystals
dc.typeMakale
dc.relation.journalMATERIALS RESEARCH BULLETIN
dc.contributor.departmentİstanbul Üniversitesi , Fen Fakültesi , Fizik
dc.identifier.volume40
dc.identifier.issue6
dc.identifier.startpage936
dc.identifier.endpage941
dc.contributor.firstauthorID175228


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