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An Application of Weibull Distribution to Hot Carrier Degradation in Threshold Voltage and Drain Current of MOS Transistors

dc.contributor.authorKuntman, Hakan
dc.contributor.authorKAÇAR, FIRAT
dc.contributor.authorKUNTMAN, AYTEN
dc.contributor.authorardalı, arda
dc.date.accessioned2021-03-03T16:42:28Z
dc.date.available2021-03-03T16:42:28Z
dc.identifier.citationardalı a., KUNTMAN A., KAÇAR F., Kuntman H., "An Application of Weibull Distribution to Hot Carrier Degradation in Threshold Voltage and Drain Current of MOS Transistors", International Conference on Electrical and Electronics Engineering, Türkiye, ss.86-90
dc.identifier.othervv_1032021
dc.identifier.otherav_45b2b349-3010-44ad-947f-c9bcf1f12616
dc.identifier.urihttp://hdl.handle.net/20.500.12627/50489
dc.language.isoeng
dc.subjectMühendislik ve Teknoloji
dc.subjectMühendislik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.titleAn Application of Weibull Distribution to Hot Carrier Degradation in Threshold Voltage and Drain Current of MOS Transistors
dc.typeBildiri
dc.contributor.departmentDiğer Kurumlar , ,
dc.contributor.firstauthorID315137


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