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dc.contributor.authorCetin, S. S.
dc.contributor.authorKinaci, Barış
dc.contributor.authorOzen, Y.
dc.contributor.authorKizilkaya, K.
dc.contributor.authorAsar, T.
dc.date.accessioned2021-03-03T17:04:02Z
dc.date.available2021-03-03T17:04:02Z
dc.identifier.citationKinaci B., Asar T., Cetin S. S. , Ozen Y., Kizilkaya K., "Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using current-voltage measurements", JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.14, ss.959-963, 2012
dc.identifier.issn1454-4164
dc.identifier.othervv_1032021
dc.identifier.otherav_47c6fb59-4e66-461e-b6b6-f5ffb65a7a98
dc.identifier.urihttp://hdl.handle.net/20.500.12627/51768
dc.description.abstractIn this study, we fabricated two types Schottky diodes (SDs), Au/ZnO/TiO2/n-Si (MIS-1) and (Ni/Au)/ZnO/TiO2/n-Si (MIS-2), to investigate main electrical parameters such as ideality factor (n), barrier height (Phi(b)), interface states (N-ss) and series resistance (R-s). ZnO/TiO2 thin film was deposited on polycrystalline n-type Si substrate using DC magnetron sputtering system. The analysis of current-voltage (I-V) measurements of ZnO/TiO2/n-Si Schottky diodes (SDs) were performed with two different rectifier contacts as Au and Ni/Au at room temperature. The values of n, Phi(b) and R-s were calculated as 1.80, 0.88 eV and 106.12 Omega for MIS-1 and 1.97, 0.82 eV and 50.13 Omega for MIS-2 SDs, respectively, from forward-bias I-V curves. The energy distribution profile of Nss for both SDs was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (Phi(e)) into account. In addition, the values of Phi(b) and R-s of MIS-1 and MIS-2 SDs were determined using Cheung's and Norde's functions and the obtained results have been compared with each other.
dc.language.isoeng
dc.subjectFİZİK, UYGULAMALI
dc.subjectElektromanyetizma, Akustik, Isı Transferi, Klasik Mekanik ve Akışkanlar Dinamiği
dc.subjectOptik
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectOPTİK
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMalzeme Bilimi
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.titleElectrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using current-voltage measurements
dc.typeMakale
dc.relation.journalJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
dc.contributor.department, ,
dc.identifier.volume14
dc.identifier.startpage959
dc.identifier.endpage963
dc.contributor.firstauthorID804821


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