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dc.contributor.authorGrebennikov, Andrei
dc.contributor.authorRamiah, Harikrishnan
dc.contributor.authorYarman, Binboga Siddik
dc.contributor.authorKumar, Narendra
dc.contributor.authorKrishnamoorthy, Ragavan
dc.date.accessioned2021-03-02T18:35:29Z
dc.date.available2021-03-02T18:35:29Z
dc.date.issued2020
dc.identifier.citationKrishnamoorthy R., Kumar N., Grebennikov A., Yarman B. S. , Ramiah H., "Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques", IEICE TRANSACTIONS ON ELECTRONICS, sa.5, ss.225-230, 2020
dc.identifier.issn1745-1353
dc.identifier.otherav_487b9bc9-8eae-45ca-8134-961bcc7beb35
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/5260
dc.identifier.urihttps://doi.org/10.1587/transele.2019ecp5036
dc.description.abstractA new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12 +/- 0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.
dc.language.isoeng
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectMühendislik ve Teknoloji
dc.titleBroadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques
dc.typeMakale
dc.relation.journalIEICE TRANSACTIONS ON ELECTRONICS
dc.contributor.departmentUniversiti Malaya , ,
dc.identifier.issue5
dc.identifier.startpage225
dc.identifier.endpage230
dc.contributor.firstauthorID2281010


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