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dc.contributor.authorKizilkaya, K.
dc.contributor.authorKinaci, B.
dc.contributor.authorOzcelika, S.
dc.contributor.authorCorekci, S.
dc.date.accessioned2021-03-03T18:32:46Z
dc.date.available2021-03-03T18:32:46Z
dc.identifier.citationKinaci B., Corekci S., Kizilkaya K., Ozcelika S., "Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes", OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.6, ss.327-330, 2012
dc.identifier.issn1842-6573
dc.identifier.othervv_1032021
dc.identifier.otherav_4f9eea99-44a0-48c8-90ee-9b501de0c684
dc.identifier.urihttp://hdl.handle.net/20.500.12627/56776
dc.description.abstractIn this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented n-GaAs substrate using V80-H solid source Molecular Beam Epitaxy (MBE) system. Atomic Force Microscope (AFM) was used in order to study the surface properties of InGaAs epilayer. The AFM measurement was performed by using an Omicron variable temperature STM/AFM instrument. The electrical parameters such as barrier height (Phi(b)), ideality factor (n), series resistance (R-s) and interface states (N-ss) of Au/InGaAs/n-GaAs SBDs have been calculated by using forward and reverse bias I-V measurements. The energy distribution of interface states of the structure was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (Phi(e)) into account. In addition, the values of R-s and Phi(b), were determined by using Cheung's methods and results have been compared with each other.
dc.language.isoeng
dc.subjectElektromanyetizma, Akustik, Isı Transferi, Klasik Mekanik ve Akışkanlar Dinamiği
dc.subjectOptik
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectOPTİK
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMalzeme Bilimi
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.titleCurrent-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
dc.typeMakale
dc.relation.journalOPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
dc.contributor.departmentKırklareli Üniversitesi , ,
dc.identifier.volume6
dc.identifier.startpage327
dc.identifier.endpage330
dc.contributor.firstauthorID804815


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