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A novel field effect transistor with dielectric polymer gel

dc.contributor.authorKösemen, Arif
dc.contributor.authorDOĞRUYOL, ZEKERİYA
dc.contributor.authorYilmaz, Faruk
dc.contributor.authorOkutan, Mustafa
dc.contributor.authorDemir, Ahmet
dc.contributor.authorSan, Sait Eren
dc.contributor.authorYerli, Yusuf
dc.contributor.authorSengez, Busra
dc.contributor.authorBasaran, Engin
dc.date.accessioned2021-03-03T19:02:26Z
dc.date.available2021-03-03T19:02:26Z
dc.date.issued2011
dc.identifier.citationKösemen A., San S. E. , Okutan M., DOĞRUYOL Z., Demir A., Yerli Y., Sengez B., Basaran E., Yilmaz F., "A novel field effect transistor with dielectric polymer gel", MICROELECTRONIC ENGINEERING, cilt.88, sa.1, ss.17-20, 2011
dc.identifier.issn0167-9317
dc.identifier.othervv_1032021
dc.identifier.otherav_5265e4a1-3dfa-4501-b29c-cc0d69ba63d5
dc.identifier.urihttp://hdl.handle.net/20.500.12627/58494
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.08.004
dc.description.abstractA novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm(2)/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 10(3) on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 mu F, which is sandwiched between glass substrates on which source and drain electrodes were constructed. (C) 2010 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectElektromanyetizma, Akustik, Isı Transferi, Klasik Mekanik ve Akışkanlar Dinamiği
dc.subjectOptik
dc.subjectTemel Bilimler
dc.subjectFizik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectOPTİK
dc.subjectFİZİK, UYGULAMALI
dc.subjectNANOBİLİM VE NANOTEKNOLOJİ
dc.subjectTemel Bilimler (SCI)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectYüzeyler ve arayüzeyler; İnce filmler ve nanosistemler
dc.subjectMühendislik ve Teknoloji
dc.titleA novel field effect transistor with dielectric polymer gel
dc.typeMakale
dc.relation.journalMICROELECTRONIC ENGINEERING
dc.contributor.departmentGebze Teknik Üniversitesi , ,
dc.identifier.volume88
dc.identifier.issue1
dc.identifier.startpage17
dc.identifier.endpage20
dc.contributor.firstauthorID727437


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