| dc.contributor.author | Thomas, S. | |
| dc.contributor.author | Erol, Ayşe | |
| dc.contributor.author | Chalker, P. | |
| dc.contributor.author | Joyce, T.B. | |
| dc.contributor.author | Bullough, T.J. | |
| dc.contributor.author | Mazzucato, S. | |
| dc.contributor.author | Potter, R. | |
| dc.contributor.author | Balkan, N. | |
| dc.date.accessioned | 2021-03-03T19:17:42Z | |
| dc.date.available | 2021-03-03T19:17:42Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Mazzucato S., Erol A., Potter R., Balkan N., Chalker P., Thomas S., Joyce T., Bullough T., "Optical properties of GaInNAs/GaAs quantum wells", SOLID-STATE ELECTRONICS, cilt.47, sa.3, ss.483-487, 2003 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_53c2ecde-b92a-4bc7-ac60-7367a458a432 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/59358 | |
| dc.identifier.uri | https://doi.org/10.1016/s0038-1101(02)00394-5 | |
| dc.description.abstract | We report the results of our studies of optical and electro-optic properties of GaInNAs/GaAs single quantum wells grown by chemical beam epitaxy. The quantum wells have been characterised by scanning transmission electron microscopy and energy dispersive X-ray analysis. Photoluminescence measurements from sequentially grown GaInAs and GaInNAs quantum wells were carried out between 4 K and room temperature. A significant difference in the temperature dependence of GaInNAs band gap compared to nitrogen-free GaInAs is observed. Photoluminescence results are used to determine the interband transition energies. The results are compared with the theoretical values obtained using the band-anticrossing model. When the device is illuminated with monochromatic light, a finite photovoltage develops in the plane of the quantum wells due to Fermi level fluctuations. (C) 2002 Elsevier Science Ltd. All rights reserved. | |
| dc.language.iso | eng | |
| dc.subject | Sinyal İşleme | |
| dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
| dc.subject | Temel Bilimler | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | FİZİK, YOĞUN MADDE | |
| dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
| dc.subject | Fizik | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | Mühendislik | |
| dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
| dc.title | Optical properties of GaInNAs/GaAs quantum wells | |
| dc.type | Makale | |
| dc.relation.journal | SOLID-STATE ELECTRONICS | |
| dc.contributor.department | , , | |
| dc.identifier.volume | 47 | |
| dc.identifier.issue | 3 | |
| dc.identifier.startpage | 483 | |
| dc.identifier.endpage | 487 | |
| dc.contributor.firstauthorID | 68823 | |
