Show simple item record

dc.contributor.authorKizilbey, Oguzhan
dc.contributor.authorYarman, Siddik Binboga
dc.contributor.authorPalamutcuogullari, Osman
dc.date.accessioned2021-03-03T20:50:24Z
dc.date.available2021-03-03T20:50:24Z
dc.date.issued2013
dc.identifier.citationKizilbey O., Palamutcuogullari O., Yarman S. B. , "3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20 W Pout and 80% PAE", IEICE ELECTRONICS EXPRESS, cilt.10, sa.5, 2013
dc.identifier.issn1349-2543
dc.identifier.otherav_5c0e312b-5fa3-49cd-85c6-dbfa44ec6559
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/64562
dc.identifier.urihttps://doi.org/10.1587/elex.10.20130104
dc.description.abstractIn this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254 mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20 W (43 dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.
dc.language.isoeng
dc.subjectMühendislik
dc.subjectMühendislik ve Teknoloji
dc.subjectSinyal İşleme
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.title3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20 W Pout and 80% PAE
dc.typeMakale
dc.relation.journalIEICE ELECTRONICS EXPRESS
dc.contributor.departmentTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) , ,
dc.identifier.volume10
dc.identifier.issue5
dc.contributor.firstauthorID207676


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record