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Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

dc.contributor.authorBalkan, N.
dc.contributor.authorErol, Ayşe
dc.contributor.authorArikan, M. C.
dc.contributor.authorSun, Y.
dc.date.accessioned2021-03-04T08:43:45Z
dc.date.available2021-03-04T08:43:45Z
dc.date.issued2009
dc.identifier.citationSun Y., Balkan N., Erol A., Arikan M. C. , "Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells", MICROELECTRONICS JOURNAL, cilt.40, sa.3, ss.403-405, 2009
dc.identifier.issn0026-2692
dc.identifier.othervv_1032021
dc.identifier.otherav_64beb13e-187a-4a76-b5d6-efb440a266d1
dc.identifier.urihttp://hdl.handle.net/20.500.12627/70094
dc.identifier.urihttps://doi.org/10.1016/j.mejo.2008.06.010
dc.description.abstractWe present electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures. The Hall mobility of electrons in the n-type material decreases dramatically with increasing nitrogen composition. The mobility of 2D holes in p-modulation-doped quantum wells is significantly higher than that of 2D electrons in n-modulation-doped material with similar nitrogen concentration. The mobility of 2D electrons is discussed using a S-matrix model for N-related alloy scattering. The results indicate that the electron mobility is intrinsically limited by scattering from nitrogen complexes. The high mobility of 2D holes is explained in terms of negligible effect of nitrogen on valance band and the absence of scattering with localized nitrogen complexes. (C) 2008 Elsevier Ltd. All rights reserved.
dc.language.isoeng
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectYüzeyler ve arayüzeyler; İnce filmler ve nanosistemler
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.subjectNANOBİLİM VE NANOTEKNOLOJİ
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.titleElectronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells
dc.typeMakale
dc.relation.journalMICROELECTRONICS JOURNAL
dc.contributor.departmentUniversity Of Essex , ,
dc.identifier.volume40
dc.identifier.issue3
dc.identifier.startpage403
dc.identifier.endpage405
dc.contributor.firstauthorID68842


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