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Influence of Al concentration on structural and optical properties of Al-doped ZnO thin films

dc.contributor.authorBaglayan, Ozge
dc.contributor.authorKara, Kamuran
dc.contributor.authorTAKCI, DENİZ KADİR
dc.contributor.authorTuzemen, Ebru Senadim
dc.contributor.authorYILMAZ, ŞADİ
dc.contributor.authorESEN, RAMAZAN
dc.date.accessioned2021-03-04T14:02:03Z
dc.date.available2021-03-04T14:02:03Z
dc.date.issued2014
dc.identifier.citationTAKCI D. K. , Tuzemen E. S. , Kara K., YILMAZ Ş., ESEN R., Baglayan O., "Influence of Al concentration on structural and optical properties of Al-doped ZnO thin films", JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.25, sa.5, ss.2078-2085, 2014
dc.identifier.issn0957-4522
dc.identifier.otherav_7f6f317f-fdb5-4428-91c4-59b7ad16e2a2
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/86970
dc.identifier.urihttps://doi.org/10.1007/s10854-014-1843-0
dc.description.abstractUndoped ZnO and Al-doped zinc oxide (ZnO:Al) thin films with different Al concentrations were prepared onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition system at room temperature. The influence of doping on the structural and optical properties of thin films was investigated. The preferential (002) orientation was weakened by high aluminum doping in films. Raman measurement was performed for the doping effects in the ZnO. Atomic force microscopy images revealed that the surface of undoped ZnO film grown at RT was smoother than that of the Al-doped ZnO (ZnO:Al) films. The reflectance of all films was studied as a function of wavelength using UV-Vis-NIR spectrophotometer. Average total reflectance values of about 35 % in the wavelength range of 400-800 nm were obtained. Optical band gap of the films was determined using the reflectance spectra by means of Kubelka-Munk formula. From optical properties, the band gap energy was estimated for all films.
dc.language.isoeng
dc.subjectMühendislik ve Teknoloji
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectMühendislik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectFİZİK, UYGULAMALI
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler
dc.titleInfluence of Al concentration on structural and optical properties of Al-doped ZnO thin films
dc.typeMakale
dc.relation.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
dc.contributor.departmentÇukurova Üniversitesi , Rektorluk , Rektorluk
dc.identifier.volume25
dc.identifier.issue5
dc.identifier.startpage2078
dc.identifier.endpage2085
dc.contributor.firstauthorID92511


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