3-Bit Phase Shifter at 3-6GHz Band for WiFi, LTE and 5G Applications

Abstract

In this paper, we present a novel phase shifter topologies to construct 45 degrees, 90 degrees and 180 degrees phase shifter cells laid-out using 180nm TSMC technology. CMOS switches are used instead of PIN diodes to have advantages of simple control circuit for switching and low power consumption. Operation of the new circuit is based on the phase shifting properties of the symmetrical all-pass LC lattices. It is straight forward to construct phase shifting cells over a wide frequency band, with various angles for multi bit phase array systems. A numerical method is analyzed in MATLAB. Top level design is simulated in CADENCE where actual elements are used from TSMC and inductors are designed in ASITIC tool. To compensate for the insertion loss an LNA for 3-6GHz band is designed and integrated. A phase shift for integrated circuit between 3-6GHz is achieved with maximum 2.2 degrees, 3.2 degrees and 4.3 degrees phase errors and insertion losses are between +1.8 similar to+ 4.5dB, - 0.7 similar to+ 1.5dB and + 0.4 similar to+ 2dB for 45 degrees, 90 degrees and 180 degrees respectively.