dc.contributor.author | Mengyan, P. W. | |
dc.contributor.author | Jayarathna, G. | |
dc.contributor.author | Baker, B. B. | |
dc.contributor.author | Lichti, R. L. | |
dc.contributor.author | Celebi, Yaşar Gürkan | |
dc.contributor.author | Yonenaga, I. | |
dc.contributor.author | Carroll, B. R. | |
dc.date.accessioned | 2021-03-04T14:44:26Z | |
dc.date.available | 2021-03-04T14:44:26Z | |
dc.identifier.citation | Jayarathna G., Lichti R. L. , Mengyan P. W. , Celebi Y. G. , Baker B. B. , Carroll B. R. , Yonenaga I., "Transition dynamics for Mu acceptor states in Si 1-x Ge x alloys", 2014 IEEE International Conference on Automation Science and Engineering, CASE 2014, Taipei, Tayvan, 18 - 22 Ağustos 2014, cilt.1583, ss.56-59 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_8321e162-57b8-4935-b5d6-495162f4f633 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/89275 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85063840990&origin=inward | |
dc.identifier.uri | https://doi.org/10.1063/1.4865604 | |
dc.description.abstract | We use the longitudinal field muon spin relaxation technique to observe charge-state and site-change transitions of muonium in Si1-xGex alloys. In this project, we examine the temperature and magnetic field dependences of the relaxation rates for Si1-xGex samples (x = 0.77, 0.81, and 0.84), in the composition range where the acceptor level lies within the band gap. This study particularly focuses on the relaxation rates for Si0.19Ge0.81 to identify various cyclic charge-state and site-change processes as a function of both temperature and magnetic field. We extract the paramagnetic hyperfine constant and the relevant transition rate parameters for site changes and charge-state transitions involving Mu acceptor states for this sample. At small x, a site change dominates the transition out of the neutral T-site acceptor state, while in higher Ge content alloys hole ionization becomes the dominant transition out of the Mu(T)(0). | |
dc.language.iso | eng | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | Fizik | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
dc.subject | Mühendislik | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Temel Bilimler | |
dc.subject | Sinyal İşleme | |
dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
dc.title | Transition dynamics for Mu acceptor states in Si 1-x Ge x alloys | |
dc.type | Bildiri | |
dc.contributor.department | Texas Tech University System , , | |
dc.identifier.volume | 1583 | |
dc.contributor.firstauthorID | 143523 | |