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dc.contributor.authorKalkan, N.
dc.contributor.authorYakut, Sena Ecem
dc.contributor.authorBas, H.
dc.contributor.authorUlutas, K.
dc.contributor.authorDeger, Deniz
dc.date.accessioned2021-03-04T18:23:55Z
dc.date.available2021-03-04T18:23:55Z
dc.identifier.citationYakut S. E. , Kalkan N., Bas H., Ulutas K., Deger D., "Dielectric properties of TlInSe2 ternary compound", JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.20, ss.657-660, 2018
dc.identifier.issn1454-4164
dc.identifier.othervv_1032021
dc.identifier.otherav_8a776f07-66fd-475d-9052-c555613fb629
dc.identifier.urihttp://hdl.handle.net/20.500.12627/93859
dc.description.abstractThe dielectric properties of TlInSe2 grown by direct fusion of their constituent elements were studied in the frequency range of 30 KHz-20 MHz, temperature range of 173-373 K. The dielectric constant and dielectric loss of TlInSe2 were calculated by measuring capacitance (C) and dielectric loss factor (tan d). Both of them were found to decrease with increasing frequency and increase with increasing temperature. This behavior can be explained with two polarization mechanisms in the investigated frequency and temperature range. The relaxation times of these polarization mechanisms were obtained from Cole-Cole fits. At lower frequencies the relaxation time is 10(-6) while it was 10(-8) at the higher frequencies. The maximum barrier height (Wm) was estimated from the dielectric loss measurements. The value of W-m was obtained as 0.1 eV. It was found to increase with increasing temperature.
dc.language.isoeng
dc.subjectFİZİK, UYGULAMALI
dc.subjectElektromanyetizma, Akustik, Isı Transferi, Klasik Mekanik ve Akışkanlar Dinamiği
dc.subjectOptik
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectOPTİK
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMalzeme Bilimi
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.titleDielectric properties of TlInSe2 ternary compound
dc.typeMakale
dc.relation.journalJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
dc.contributor.departmentYıldız Teknik Üniversitesi , ,
dc.identifier.volume20
dc.identifier.startpage657
dc.identifier.endpage660
dc.contributor.firstauthorID82759


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